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Browsing by Published In Semiconductor Science and Technology

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Showing results 1 to 16 of 16
Issue DateTitleAuthor(s)
2021A new physical insight into the zero-temperature coefficient with self-heating in silicon-on-insulator fin field-effect transistorsBanchhor S.; Chauhan N.; Anand, Bulusu
2021A new physical insight into the zero-temperature coefficient with self-heating in silicon-on-insulator fin field-effect transistorsBanchhor S.; Chauhan N.; Anand, Bulusu
2021A physical insight into variation aware minimum v DDfor deep subthreshold operation of FinFETYadav S.; Chauhan N.; Tyagi S.; Sharma A.; Banchhor S.; Joshi R.; Pratap R.; Anand, Bulusu
2021A physical insight into variation aware minimum v DDfor deep subthreshold operation of FinFETYadav S.; Chauhan N.; Tyagi S.; Sharma A.; Banchhor S.; Joshi R.; Pratap R.; Anand, Bulusu
2002A pseudo-two-dimensional model of an n-channel MOSFET under the influence of ionizing radiationChauhan R.K.; Dasgupta, Sudeb; Chakrabarti P.
1991Acceptor states in Pd/n-GaAs devices and effect of hydrogenationSrivastava P.C.; Chandra S.; Singh U.P.
2020Demonstration of a novel tunnel FET with channel sandwiched by drainBagga N.; Chauhan N.; Banchhor S.; Gupta D.; Dasgupta, Sudeb
1995Donor states in Pd/p-GaAs devices and the effect of hydrogenationSingh U.P.; Srivastava P.C.; Chandra S.
2018Enhancement of photoresponse property of perovskite solar cell by aluminium chloride (AlCl 3 )Ghosh S.S.; Sil, Anjan
2021High-performance voltage controlled multilevel MRAM cellNisar A.; Dhull S.; Kumar Kaushik, Brajesh; Mittal S.
1998Hydrogenation studies in p-GaAsSingh U.P.; Srivastava P.C.
2006Novel nanoscale device architecture to reduce leakage currents in logic circuits: A quantum-mechanical studyDatta D.; Ganguly S.; Dasgupta, Sudeb; Prasad Sarab A.A.
2020Role of polarity in SiN on Al/GaN and the pathway to stable contactsReddy P.; Khachariya D.; Szymanski D.; Breckenridge M.H.; Sarkar, Biplab; Pavlidis S.; Collazo R.; Sitar Z.; Kohn E.
2021Transient analysis of graphene-based on-chip interconnects using closed-form MRA modelKumar A.; Kumar Kaushik, Brajesh
2003Two-dimensional numerical modelling of a deep submicron irradiated MOSFET to extract its global characteristicsDasgupta, Sudeb
2015Understanding the gradual reset in Pt/Al2O3/Ni RRAM for synaptic applicationsSarkar, Biplab; Lee B.; Misra V.