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Browsing by Published In IEEE Transactions on Device and Materials Reliability

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Showing results 1 to 11 of 11
Issue DateTitleAuthor(s)
2014A degradation model of double gate and gate-all-around MOSFETs with interface trapped charges including effects of channel mobile charge carriersShankar R.; Kaushal G.; Maheshwaram S.; Dasgupta, Sudeb; Manhas, Sanjeev Kumar
2020A Highly Reliable and Energy Efficient Radiation Hardened 12T SRAM Cell DesignKumar C.I.; Anand, Bulusu
2020A Highly Reliable and Energy Efficient Radiation Hardened 12T SRAM Cell DesignKumar C.I.; Anand, Bulusu
2021A Thermal Circuit Representing Frequency Dependent Dynamic Heating between Electron and Lattice in SOI-FinFETKumar V.; Dasgupta, Sudeb; Datta, Arnab
2017Compact NBTI reliability modeling in Si nanowire MOSFETs and effect in circuitsPrakash O.; Beniwal S.; Maheshwaram S.; Anand, Bulusu; Singh N.; Manhas, Sanjeev Kumar
2017Compact NBTI reliability modeling in Si nanowire MOSFETs and effect in circuitsPrakash O.; Beniwal S.; Maheshwaram S.; Anand, Bulusu; Singh N.; Manhas S.K.
2020Design and Analysis of Leakage-Induced False Error Tolerant Error Detecting Latch for Sub/Near-Threshold ApplicationsSharma P.; Das, Bishnu Prasad
2021Eight-Level/Cell Storage by Tuning the Spatial Distribution of Dielectrics in a Tri-Layer ReRAM Cell: Electrical Characteristics and ReliabilityVishwakarma K.; Kishore R.; Datta, Arnab
2021Impact of Bias Temperature Stress on IGZO/Ni/IGZO Steep Subthreshold Vertical Current Driver Fabricated at Room TemperatureKishore R.; Vishwakarma K.; Datta, Arnab
2016Impact of Dielectric Resistive Heater, Bottom Contact and Reading Scheme on the Reliability of Nanoscale Low Power Phase Change Memory (PCM) Cell: 3-D-ADI ModelingJagtiani S.; Datta, Arnab
2020Oxide edge trap density extraction in silicon nanowire MOSFET from tunnel current noise measurement in gated diode like arrangementKumar Sharma D.; Datta, Arnab