Skip navigation

Browsing by Published In IEEE Electron Device Letters

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 1 to 20 of 21  next >
Issue DateTitleAuthor(s)
2009A novel gate-assisted reverse-read scheme to control bit coupling and read disturb for multibit/cell operation in deeply scaled split-gate SONOS flash EEPROM cellsDatta, Arnab; Asnani R.; Mahapatra S.
2012Analysis of MWCNT and bundled SWCNT interconnects: Impact on crosstalk and areaMajumder M.K.; Pandya N.D.; Kumar Kaushik, Brajesh; Manhas, Sanjeev Kumar
2019Characterization and Modeling of Flicker Noise in FinFETs at Advanced Technology NodeKushwaha P.; Agarwal H.; Lin Y.-K.; Dasgupta, Avirup; Kao M.-Y.; Lu Y.; Yue Y.; Chen X.; Wang J.; Sy W.; Yang F.; Chidambaram P.R.C.; Salahuddin S.; Hu C.
2020Compact Model for Geometry Dependent Mobility in Nanosheet FETsDasgupta, Avirup; Parihar S.S.; Agarwal H.; Kushwaha P.; Chauhan Y.S.; Hu C.
2012Device circuit co-design issues in vertical nanowire CMOS platformMaheshwaram S.; Manhas, Sanjeev Kumar; Kaushal G.; Anand, Bulusu; Singh N.
2012Device circuit co-design issues in vertical nanowire CMOS platformMaheshwaram S.; Manhas S.K.; Kaushal G.; Anand, Bulusu; Singh N.
2014Dual floating gate unified memory MOSFET with simultaneous dynamic and non-volatile operationSarkar, Biplab; Ramanan N.; Jayanti S.; Spigna N.D.; Lee B.; Franzon P.; Misra V.
2007Dual-bit/cell SONOS flash EEPROMs: Impact of channel engineering on programming speed and bit coupling effectDatta, Arnab; Kumar P.B.; Mahapatra S.
2020Gate-All-Around FET Design Rule for Suppression of Excess Non-LinearityDasgupta, Avirup; Hu C.
2018Impact of Capture/Emission Time Constant at Donor-Acceptor Interface on Current-Voltage Characteristics of Hybrid Organic/Inorganic Quantum Dot Solar CellsVerma U.K.; Bhatt A.N.; Kumar, Brijesh
2021Impact of Random Spatial Fluctuation in Non-Uniform Crystalline Phases on the Device Variation of Ferroelectric FETGarg C.; Chauhan N.; Deng S.; Khan A.I.; Dasgupta, Sudeb; Anand, Bulusu; Ni K.
2021Impact of Random Spatial Fluctuation in Non-Uniform Crystalline Phases on the Device Variation of Ferroelectric FETGarg C.; Chauhan N.; Deng S.; Khan A.I.; Dasgupta S.; Anand, Bulusu; Ni K.
2018Improvement of Row Hammering Using Metal Nanoparticles in DRAM-A Simulation StudyGautam S.K.; Kumar A.; Manhas, Sanjeev Kumar
2020Magnetic Field Tunable Ferromagnetic Shape Memory Alloy-Based Piezo-ResonatorPawar S.; Singh J.; Kaur, Davinder
2019Optimization of NCFET by Matching Dielectric and Ferroelectric Nonuniformly Along the ChannelKao M.-Y.; Lin Y.-K.; Agarwal H.; Liao Y.-H.; Kushwaha P.; Dasgupta, Avirup; Salahuddin S.; Hu C.
2019Proposal for capacitance matching in negative capacitance field-effect transistorsAgarwal H.; Kushwaha P.; Lin Y.-K.; Kao M.-Y.; Liao Y.-H.; Dasgupta, Avirup; Salahuddin S.; Hu C.
2019Spacer Engineering in Negative Capacitance FinFETsLin Y.-K.; Agarwal H.; Kao M.-Y.; Zhou J.; Liao Y.-H.; Dasgupta, Avirup; Kushwaha P.; Salahuddin S.; Hu C.
2015Spacer engineering-based high-performance reconfigurable FET with low off current characteristicsBhattacharjee A.; Saikiran M.; Dutta A.; Anand, Bulusu; Dasgupta, Sudeb
2015Spacer engineering-based high-performance reconfigurable FET with low off current characteristicsBhattacharjee A.; Saikiran M.; Dutta A.; Anand, Bulusu; Dasgupta S.
2011Vertical silicon nanowire gate-all-around field effect transistor based nanoscale CMOSMaheshwaram S.; Manhas, Sanjeev Kumar; Kaushal G.; Anand, Bulusu; Singh N.