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Browsing by Author Vaddi R.

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Showing results 1 to 16 of 16
Issue DateTitleAuthor(s)
2011Analytical modeling of subthreshold current and subthreshold swing of an underlap DGMOSFET with tiedindependent gate and symmetricasymmetric optionsVaddi R.; Agarwal R.P.; Dasgupta, Sudeb
2010Analytical potential distribution model for underlap double gate MOSFETs with 3T-4T and symmetric-asymmetric options for subthreshold operation: A conformal mapping approachVaddi R.; Dasgupta, Sudeb; Agarwal R.P.
2012Compact modeling of a generic double-gate MOSFET with gate-S/D underlap for subthreshold operationVaddi R.; Agarwal R.P.; Dasgupta, Sudeb
2011Design and analysis of double-gate MOSFETs for ultra-low power radio frequency identification (RFID): Device and circuit co-designVaddi R.; Agarwal R.P.; Dasgupta, Sudeb; Kim T.T.
2010Device and circuit co-design robustness studies in the subthreshold logic for ultralow-power applications for 32 nm CMOSVaddi R.; Dasgupta, Sudeb; Agarwal R.P.
2009Device and circuit design challenges in the digital subthreshold region for ultralow-power applicationsVaddi R.; Dasgupta, Sudeb; Agarwal R.P.
2011Effect of gate - S/D underlap, asymmetric and independent gate features in the minimization of short channel effects in nanoscale DGMOSFETVaddi R.; Dasgupta, Sudeb; Agarwal R.P.
2012Enhanced bias-flip rectifier with ultra-low power control for piezo electric energy harvester in the microwatt application scenarioVaddi R.; Dasgupta, Sudeb
2021Hardware Security Exploiting Post-CMOS Devices: Fundamental Device Characteristics, State-of-the-Art Countermeasures, Challenges and RoadmapJapa A.; Majumder M.K.; Sahoo S.K.; Vaddi R.; Kumar Kaushik, Brajesh
2009Investigation of robustness and performance comparisons of 3T - 4T DG-FinFETs for ultra low power subthreshold logicVaddi R.; Dasgupta, Sudeb; Agarwal R.P.
2011Optimization of vertical silicon nanowire based solar cell using 3D TCAD simulationKumar J.; Manhas, Sanjeev Kumar; Singh, Dharmendra; Vaddi R.
2010Robust and ultra low power subthreshold logic circuits with symmetric, asymmetrie, 3T, 4T DGFinFETsVaddi R.; Dasgupta, Sudeb; Agarwal R.P.
2010Robustness comparison of DG FinFETs with symmetric, asymmetric, tied and independent gate options with circuit co-design for ultra low power subthreshold logicVaddi R.; Dasgupta, Sudeb; Agarwal R.P.
2009SDG vs ADG with tied and independent gate options in the subthreshold logic for ultra low power applicationsVaddi R.; Dasgupta, Sudeb; Agarwal R.P.
2011Two dimensional analytical subthreshold current model of a generic double gate MOSFET with gate underlapVaddi R.; Dasgupta, Sudeb; Agarwal R.P.
2011Two dimensional analytical subthreshold swing model of a double gate MOSFET with Gate-S/D underlap, asymmetric and independent gate featuresVaddi R.; Dasgupta, Sudeb; Agarwal R.P.