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Browsing by Author Kohn E.

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Showing results 1 to 8 of 8
Issue DateTitleAuthor(s)
2018Au:Ga Alloyed clusters to enhance Al contacts to P-type GaNKlump A.; Kaess F.; Sarkar, Biplab; Kirste R.; Collazo R.; Reddy P.; Mita S.; Sitar Z.; Breckenridge M.H.; Kohn E.
2017Defect-free Ni/GaN Schottky barrier behavior with high temperature stabilityReddy P.; Sarkar, Biplab; Kaess F.; Gerhold M.; Kohn E.; Collazo R.; Sitar Z.
2017High free carrier concentration in p-GaN grown on AlN substratesSarkar, Biplab; Mita S.; Reddy P.; Klump A.; Kaess F.; Tweedie J.; Bryan I.; Bryan Z.; Kirste R.; Kohn E.; Collazo R.; Sitar Z.
2016High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studiesReddy P.; Washiyama S.; Kaess F.; Hayden Breckenridge M.; Hernandez-Balderrama L.H.; Haidet B.B.; Alden D.; Franke A.; Sarkar, Biplab; Kohn E.; Collazo R.; Sitar Z.
2017Material considerations for the development of III-nitride power devicesSarkar, Biplab; Reddy P.; Kaess F.; Haidet B.B.; Tweedie J.; Mita S.; Kirste R.; Kohn E.; Collazo R.; Sitar Z.; Ohtani N.; Bakowski M.; Dudley M.; Raghothamachar B.; Shenai K.
2018On Ni/Au Alloyed Contacts to Mg-Doped GaNSarkar, Biplab; Reddy P.; Klump A.; Kaess F.; Rounds R.; Kirste R.; Mita S.; Kohn E.; Collazo R.; Sitar Z.
2018Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al compositionReddy P.; Washiyama S.; Mecouch W.; Hernandez-Balderrama L.H.; Kaess F.; Hayden Breckenridge M.; Sarkar, Biplab; Haidet B.B.; Franke A.; Kohn E.; Collazo R.; Sitar Z.
2020Role of polarity in SiN on Al/GaN and the pathway to stable contactsReddy P.; Khachariya D.; Szymanski D.; Breckenridge M.H.; Sarkar, Biplab; Pavlidis S.; Collazo R.; Sitar Z.; Kohn E.