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Browsing by Author Guo Q.

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Showing results 1 to 9 of 9
Issue DateTitleAuthor(s)
20186kW/cm2 UVC laser threshold in optically pumped lasers achieved by controlling point defect formationKirste R.; Guo Q.; Dycus J.H.; Franke A.; Mita S.; Sarkar, Biplab; Reddy P.; LeBeau J.M.; Collazo R.; Sitar Z.
2019Al rich AlGaN based APDs on single crystal AlN with solar blindness and room temperature operationReddy P.; Hayden Breckenridge M.; Klump A.; Guo Q.; Mita S.; Sarkar, Biplab; Kirste R.; Moody B.; Tweedie J.; Collazo R.; Sitar Z.
2018Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVDBryan I.; Bryan Z.; Washiyama S.; Reddy P.; Gaddy B.; Sarkar, Biplab; Breckenridge M.H.; Guo Q.; Bobea M.; Tweedie J.; Mita S.; Irving D.; Collazo R.; Sitar Z.
2021High n -type conductivity and carrier concentration in Si-implanted homoepitaxial AlNBreckenridge M.H.; Bagheri P.; Guo Q.; Sarkar, Biplab; Khachariya D.; Pavlidis S.; Tweedie J.; Kirste R.; Mita S.; Reddy P.; Collazo R.; Sitar Z.
2018Improving the conductivity limits in Si doped Al rich AlGaNReddy P.; Guo Q.; Tweedie J.; Washiyama S.; Kaess F.; Mita S.; Breckenridge M.H.; Kirste R.; Collazo R.; Klump A.; Sarkar, Biplab; Sitar Z.
2018Recent breakthroughs in AlGaN-based UV light emittersKirste R.; Mita S.; Guo Q.; Sarkar, Biplab; Kaess F.; Tweedie J.; Collazo R.; Sitar Z.
2021Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelengthKirste R.; Sarkar, Biplab; Reddy P.; Guo Q.; Collazo R.; Sitar Z.
2018The influence of point defects on the thermal conductivity of AlN crystalsRounds R.; Sarkar, Biplab; Alden D.; Guo Q.; Klump A.; Hartmann C.; Nagashima T.; Kirste R.; Franke A.; Bickermann M.; Kumagai Y.; Sitar Z.; Collazo R.
2020The role of chemical potential in compensation control in Si:AlGaNWashiyama S.; Reddy P.; Sarkar, Biplab; Breckenridge M.H.; Guo Q.; Bagheri P.; Klump A.; Kirste R.; Tweedie J.; Mita S.; Sitar Z.; Collazo R.