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Browsing by Author Chauhan Y.S.
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Showing results 1 to 20 of 38
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Issue Date
Title
Author(s)
2013
A surface potential based model for GaN HEMTs
Agnihotri S.
;
Ghosh S.
;
Dasgupta, Avirup
;
Chauhan Y.S.
;
Khandelwal S.
2017
Accurate modeling of centroid shift in III-V FETs including non-linear potential profile and wave-function penetration
Singh D.K.
;
Dasgupta, Avirup
;
Chauhan Y.S.
2017
An Improved Model for Quasi-Ballistic Transport in MOSFETs
Dasgupta, Avirup
;
Agarwal A.
;
Chauhan Y.S.
2019
Analysis and Compact Modeling of Insulator-Metal Transition Material-Based PhaseFET Including Hysteresis and Multidomain Switching
Dasgupta, Avirup
;
Verma A.
;
Chauhan Y.S.
2014
Analysis and modeling of quantum capacitance in III-V transistors
Dasgupta, Avirup
;
Yadav C.
;
Rastogi P.
;
Agarwal A.
;
Chauhan Y.S.
2015
ASM-HEMT: Compact model for GaN HEMTs
Dasgupta, Avirup
;
Ghosh S.
;
Chauhan Y.S.
;
Khandelwal S.
2019
Atomistic simulation and compact modeling of atomically thin transistors
Chauhan Y.S.
;
Yadav C.
;
Dasgupta, Avirup
;
Rastogi P.
2020
BSIM compact model of quantum confinement in advanced nanosheet FETs
Dasgupta, Avirup
;
Parihar S.S.
;
Kushwaha P.
;
Agarwal H.
;
Kao M.-Y.
;
Salahuddin S.
;
Chauhan Y.S.
;
Hu C.
2015
BSIM-CMG: Standard FinFET compact model for advanced circuit design
Duarte J.P.
;
Khandelwal S.
;
Medury A.
;
Hu C.
;
Kushwaha P.
;
Agarwal H.
;
Dasgupta, Avirup
;
Chauhan Y.S.
;
Dielacher F.
;
Pribyl W.
;
Hueber G.
2020
BSIM-IMG: Advanced Model for FDSOI Transistors with Back Channel Inversion
Agarwal H.
;
Kushwaha P.
;
Dasgupta, Avirup
;
Y-Kao M.
;
Morshed T.
;
Workman G.
;
Shanbhag K.
;
Li X.
;
Vinothkumar V.
;
Chauhan Y.S.
;
Salahuddin S.
;
Hu C.
2016
Capacitance modeling in dual field-plate power GaN HEMT for accurate switching behavior
Ahsan S.A.
;
Ghosh S.
;
Sharma K.
;
Dasgupta, Avirup
;
Khandelwal S.
;
Chauhan Y.S.
2016
Characterization of RF Noise in UTBB FD-SOI MOSFET
Kushwaha P.
;
Dasgupta, Avirup
;
Sahu Y.
;
Khandelwal S.
;
Hu C.
;
Chauhan Y.S.
2020
Compact Model for Geometry Dependent Mobility in Nanosheet FETs
Dasgupta, Avirup
;
Parihar S.S.
;
Agarwal H.
;
Kushwaha P.
;
Chauhan Y.S.
;
Hu C.
2018
Compact Modeling of Cross-Sectional Scaling in Gate-All-Around FETs: 3-D to 1-D Transition
Dasgupta, Avirup
;
Rastogi P.
;
Agarwal A.
;
Hu C.
;
Chauhan Y.S.
2017
Compact Modeling of Drain Current Thermal Noise in FDSOI MOSFETs Including Back-Bias Effect
Sahu Y.
;
Kushwaha P.
;
Dasgupta, Avirup
;
Hu C.
;
Chauhan Y.S.
2014
Compact modeling of flicker noise in HEMTs
Dasgupta, Avirup
;
Khandelwal S.
;
Chauhan Y.S.
2020
Compact Modeling of Negative Capacitance Nanosheet FET including Quasi-Ballistic Transport
Gaidhane A.D.
;
Pahwa G.
;
Dasgupta, Avirup
;
Verma A.
;
Chauhan Y.S.
2020
Compact Modeling of Negative-Capacitance FDSOI FETs for Circuit Simulations
Dabhi C.K.
;
Parihar S.S.
;
Dasgupta, Avirup
;
Chauhan Y.S.
2016
Compact Modeling of Surface Potential, Charge, and Current in Nanoscale Transistors Under Quasi-Ballistic Regime
Dasgupta, Avirup
;
Agarwal A.
;
Khandelwal S.
;
Chauhan Y.S.
2020
Compact modeling of surface potential, drain current and terminal charges in negative capacitance nanosheet FET including quasi-ballistic transport
Gaidhane A.D.
;
Pahwa G.
;
Dasgupta, Avirup
;
Verma A.
;
Chauhan Y.S.