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Issue Date	Title	Author(s)
2013	A surface potential based model for GaN HEMTs	Agnihotri S.; Ghosh S.; Dasgupta, Avirup; Chauhan Y.S.; Khandelwal S.
2017	Accurate modeling of centroid shift in III-V FETs including non-linear potential profile and wave-function penetration	Singh D.K.; Dasgupta, Avirup; Chauhan Y.S.
2017	An Improved Model for Quasi-Ballistic Transport in MOSFETs	Dasgupta, Avirup; Agarwal A.; Chauhan Y.S.
2019	Analysis and Compact Modeling of Insulator-Metal Transition Material-Based PhaseFET Including Hysteresis and Multidomain Switching	Dasgupta, Avirup; Verma A.; Chauhan Y.S.
2014	Analysis and modeling of quantum capacitance in III-V transistors	Dasgupta, Avirup; Yadav C.; Rastogi P.; Agarwal A.; Chauhan Y.S.
2015	ASM-HEMT: Compact model for GaN HEMTs	Dasgupta, Avirup; Ghosh S.; Chauhan Y.S.; Khandelwal S.
2019	Atomistic simulation and compact modeling of atomically thin transistors	Chauhan Y.S.; Yadav C.; Dasgupta, Avirup; Rastogi P.
2020	BSIM compact model of quantum confinement in advanced nanosheet FETs	Dasgupta, Avirup; Parihar S.S.; Kushwaha P.; Agarwal H.; Kao M.-Y.; Salahuddin S.; Chauhan Y.S.; Hu C.
2015	BSIM-CMG: Standard FinFET compact model for advanced circuit design	Duarte J.P.; Khandelwal S.; Medury A.; Hu C.; Kushwaha P.; Agarwal H.; Dasgupta, Avirup; Chauhan Y.S.; Dielacher F.; Pribyl W.; Hueber G.
2020	BSIM-IMG: Advanced Model for FDSOI Transistors with Back Channel Inversion	Agarwal H.; Kushwaha P.; Dasgupta, Avirup; Y-Kao M.; Morshed T.; Workman G.; Shanbhag K.; Li X.; Vinothkumar V.; Chauhan Y.S.; Salahuddin S.; Hu C.
2016	Capacitance modeling in dual field-plate power GaN HEMT for accurate switching behavior	Ahsan S.A.; Ghosh S.; Sharma K.; Dasgupta, Avirup; Khandelwal S.; Chauhan Y.S.
2016	Characterization of RF Noise in UTBB FD-SOI MOSFET	Kushwaha P.; Dasgupta, Avirup; Sahu Y.; Khandelwal S.; Hu C.; Chauhan Y.S.
2020	Compact Model for Geometry Dependent Mobility in Nanosheet FETs	Dasgupta, Avirup; Parihar S.S.; Agarwal H.; Kushwaha P.; Chauhan Y.S.; Hu C.
2018	Compact Modeling of Cross-Sectional Scaling in Gate-All-Around FETs: 3-D to 1-D Transition	Dasgupta, Avirup; Rastogi P.; Agarwal A.; Hu C.; Chauhan Y.S.
2017	Compact Modeling of Drain Current Thermal Noise in FDSOI MOSFETs Including Back-Bias Effect	Sahu Y.; Kushwaha P.; Dasgupta, Avirup; Hu C.; Chauhan Y.S.
2014	Compact modeling of flicker noise in HEMTs	Dasgupta, Avirup; Khandelwal S.; Chauhan Y.S.
2020	Compact Modeling of Negative Capacitance Nanosheet FET including Quasi-Ballistic Transport	Gaidhane A.D.; Pahwa G.; Dasgupta, Avirup; Verma A.; Chauhan Y.S.
2020	Compact Modeling of Negative-Capacitance FDSOI FETs for Circuit Simulations	Dabhi C.K.; Parihar S.S.; Dasgupta, Avirup; Chauhan Y.S.
2016	Compact Modeling of Surface Potential, Charge, and Current in Nanoscale Transistors Under Quasi-Ballistic Regime	Dasgupta, Avirup; Agarwal A.; Khandelwal S.; Chauhan Y.S.
2020	Compact modeling of surface potential, drain current and terminal charges in negative capacitance nanosheet FET including quasi-ballistic transport	Gaidhane A.D.; Pahwa G.; Dasgupta, Avirup; Verma A.; Chauhan Y.S.

Showing results 1 to 20 of 38 next >

Browsing by Author Chauhan Y.S.