Skip navigation

Browsing by Author Breckenridge M.H.

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 1 to 7 of 7
Issue DateTitleAuthor(s)
2018Au:Ga Alloyed clusters to enhance Al contacts to P-type GaNKlump A.; Kaess F.; Sarkar, Biplab; Kirste R.; Collazo R.; Reddy P.; Mita S.; Sitar Z.; Breckenridge M.H.; Kohn E.
2018Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVDBryan I.; Bryan Z.; Washiyama S.; Reddy P.; Gaddy B.; Sarkar, Biplab; Breckenridge M.H.; Guo Q.; Bobea M.; Tweedie J.; Mita S.; Irving D.; Collazo R.; Sitar Z.
2021High n -type conductivity and carrier concentration in Si-implanted homoepitaxial AlNBreckenridge M.H.; Bagheri P.; Guo Q.; Sarkar, Biplab; Khachariya D.; Pavlidis S.; Tweedie J.; Kirste R.; Mita S.; Reddy P.; Collazo R.; Sitar Z.
2018Improving the conductivity limits in Si doped Al rich AlGaNReddy P.; Guo Q.; Tweedie J.; Washiyama S.; Kaess F.; Mita S.; Breckenridge M.H.; Kirste R.; Collazo R.; Klump A.; Sarkar, Biplab; Sitar Z.
2018N-and P-type doping in Al-rich AlGaN and A1NSarkar, Biplab; Washiyama S.; Breckenridge M.H.; Klump A.; Baker J.N.; Reddy P.; Tweedie J.; Mita S.; Kirste R.; Irving D.L.; Collazo R.; Sitar Z.; Shenai K.Bakowski M.Dudley M.Ohtani N.Raghothamachar B.
2020Role of polarity in SiN on Al/GaN and the pathway to stable contactsReddy P.; Khachariya D.; Szymanski D.; Breckenridge M.H.; Sarkar, Biplab; Pavlidis S.; Collazo R.; Sitar Z.; Kohn E.
2020The role of chemical potential in compensation control in Si:AlGaNWashiyama S.; Reddy P.; Sarkar, Biplab; Breckenridge M.H.; Guo Q.; Bagheri P.; Klump A.; Kirste R.; Tweedie J.; Mita S.; Sitar Z.; Collazo R.